STA333W datasheet(12/49 Pages) STMICROELECTRONICS

12 / 49 page

Electrical specification

STA333W

12/49

Doc ID 13365 Rev 2

3.3

Electrical specifications - digital section

3.4

Electrical specifications - power section

The specifications in Table 7 below are given for the conditions VCC = 18 V, VDD = 3.3 V,

fSW = 384 kHz, Tamb = 25 °C and RL = 8 Ω, unless otherwise specified.

Table 6.

Electrical characteristics for digital section

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Iil

Input current, no pull-up or

pull-down resistor

Vi = 0 V

±10

µA

Iih

Vi = VDD = 3.6 V

±10

µA

Vil

Low-level input voltage

0.2 *

VDD

Vih

High-level input voltage

0.8 *

VDD

--V

Vol

Low-level output voltage

Iol = 2 mA

0.4 *

VDD

Voh

High-level output voltage

Ioh = 2 mA

0.8 *

VDD

--V

Ipu

Pull-up current

125

µA

Rpu

Equivalent pull-up

resistance

Ω

Table 7.

Electrical specifications for power section

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Output power BTL

THD = 1%

THD = 10%

RdsON

Power P-channel/N-channel

MOSFET (total bridge)

ld = 1 A

180

250

Ω

ldss

Power P-channel/N-channel

leakage

VCC = 18 V

--10

µA

Power P-channel RdsON

matching

ld = 1 A

--%

Power N-channel RdsON

matching

ld = 1 A

--%

ILDT

Low-current dead time

(static)

Resistive load,

refer to Figure 5

IHDT

High-current dead time

(dynamic)

Refer to Figure 6

1020ns

Rise time

Resistive load,

refer to Figure 5

Fall time

Resistive load,

refer to Figure 5

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