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S29GL01GP Datasheet(PDF) 61 Page - SPANSION

Part # S29GL01GP
Description  1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
PDF  81 Pages
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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S29GL01GP Datasheet(HTML) 61 Page - SPANSION

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October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
61
Data
She e t
11.7.3
S29GL-P Erase and Program Operations
Notes
1. Not 100% tested.
2. See Section 11.6 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
Table 11.6 S29GL-P Erase and Program Operations
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
100
110
120
130
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
130
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
30
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
480
µs
Effective Write Buffer Program Operation (Notes 2, 4)Per Word
Typ
15
µs
Accelerated Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming Operation (Note 2)
Word
Typ
54
µs
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
35
µs
tBUSY
Erase/Program Valid to RY/BY# Delay
Max
90
ns
tSEA
Sector Erase Timeout
Max
50
µs



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