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AT45DB081D Datasheet(PDF) 1 Page - Analog Devices |
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AT45DB081D Datasheet(HTML) 1 Page - Analog Devices |
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1 / 53 page ![]() Features • Single 2.5V or 2.7V to 3.6V Supply • RapidS Serial Interface: 66MHz Maximum Clock Frequency – SPI Compatible Modes 0 and 3 • User Configurable Page Size – 256-Bytes per Page – 264-Bytes per Page – Page Size Can Be Factory Pre-configured for 256-Bytes • Page Program Operation – Intelligent Programming Operation – 4,096 Pages (256/264-Bytes/Page) Main Memory • Flexible Erase Options – Page Erase (256-Bytes) – Block Erase (2-Kbytes) – Sector Erase (64-Kbytes) – Chip Erase (8Mbits) • Two SRAM Data Buffers (256-/264-Bytes) – Allows Receiving of Data while Reprogramming the Flash Array • Continuous Read Capability through Entire Array – Ideal for Code Shadowing Applications • Low-power Dissipation – 7mA Active Read Current Typical –25μA Standby Current Typical –15μA Deep Power Down Typical • Hardware and Software Data Protection Features – Individual Sector • Sector Lockdown for Secure Code and Data Storage – Individual Sector • Security: 128-byte Security Register – 64-byte User Programmable Space – Unique 64-byte Device Identifier • JEDEC Standard Manufacturer and Device ID Read • 100,000 Program/Erase Cycles Per Page Minimum • Data Retention – 20 Years • Industrial Temperature Range • Green (Pb/Halide-free/RoHS Compliant) Packaging Options 1. Description The Adesto® AT45DB081D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-stor- age applications. The AT45DB081D supports RapidS™ serial interface for applications requiring very high speed operations. RapidS serial interface is SPI com- patible for frequencies up to 66MHz. Its 8,650,752-bits of memory are organized as 4,096 pages of 256-bytes or 264-bytes each. In addition to the main memory, the AT45DB081D also contains two SRAM buffers of 256-/264-bytes each. The buffers allow the receiving of data while a page in the main Memory is being reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil- ity) is easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple 8-megabit 2.5V or 2.7V DataFlash AT45DB081D 3596O–DFLASH–1/2013 |
Similar Part No. - AT45DB081D_13 |
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Similar Description - AT45DB081D_13 |
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