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HDMIULC6-4F3 Datasheet(PDF) 2 Page - STMicroelectronics |
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HDMIULC6-4F3 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics HDMIULC6-4F3 2/9 Doc ID 15511 Rev 3 1 Characteristics Figure 2. Internal circuit schematic (top view) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP ESD discharge IEC 61000-4-2 Air discharge Contact discharge ±15 ±8 kV PPP Peak pulse power dissipation (8/20 µs) 35 W Tj Maximum junction temperature 125 °C Tstg Storage temperature range -55 to + 150 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Parameter Test condition Min. Typ. Max. Unit VBR Breakdown voltage between VBUS and GND IR = 1 mA 6 V IRM Leakage current VRM = 3 V 70 nA CI/O-GND (1) 1. CI/O-GND values are given per line and relative to one GND. Capacitance between I/O and GND Vline = 0 V, Vosc = 30 mV, F = 1 MHz 1.1 1.4 pF C I/O-GND (1) Capacitance variation between I/O and GND Vline = 0 V, Vosc = 30 mV, F = 1 MHz between two lines of the same lane 0.06 pF BW Bandwidth - 3 dB 5.3 GHz |
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