CSD87381P datasheet(4/20 Pages) TI

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CSD87381P

SLPS405B – MARCH 2013 – REVISED MAY 2013

www.ti.com

ELECTRICAL CHARACTERISTICS

TA = 25°C (unless otherwise stated)

Q1 Control FET

Q2 Sync FET

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

Static Characteristics

BVDSS

Drain to Source Voltage

VGS = 0V, IDS = 250μA

Drain to Source Leakage

IDSS

VGS = 0V, VDS = 24V

μA

Current

Gate to Source Leakage

IGSS

VDS = 0V, VGS = 10

100

Current

Gate to Source Threshold

VGS(th)

VDS = VGS, IDS = 250μA

1.1

1.9

1.0

1.7

Voltage

VGS = 4.5V, IDS = 8A

15.7

18.9

7.0

8.4

Drain to Source On

RDS(on)

Ω

Resistance

VGS = 8V, IDS = 8A

13.6

16.3

6.3

7.6

gfs

Transconductance

VDS = 10V, IDS = 8A

Dynamic Characteristics

CISS

Input Capacitance (1)

434

564

1020

1320

COSS

Output Capacitance (1)

VGS = 0V, VDS = 15V,

225

293

308

400

f = 1MHz

Reverse Transfer

CRSS

9.1

11.8

Capacitance (1)

Series Gate Resistance (1)

5.0

6.4

1.25

2.5

Gate Charge Total (4.5V)

3.9

5.0

8.9

11.5

(1)

Gate Charge - Gate to

Qgd

0.9

2.5

VDS = 15V,

Drain

IDS = 8A

Gate Charge - Gate to

Qgs

1.2

2.0

Source

Qg(th)

Gate Charge at Vth

0.7

1.3

QOSS

Output Charge

VDD = 12V, VGS = 0V

4.9

8.5

td(on)

Turn On Delay Time

6.7

7.9

Rise Time

19.3

16.3

VDS = 15V, VGS = 4.5V,

IDS = 8A, RG = 2Ω

td(off)

Turn Off Delay Time

10.6

16.8

Fall Time

3.0

2.9

Diode Characteristics

VSD

Diode Forward Voltage

IDS = 8A, VGS = 0V

0.85

0.79

Qrr

Reverse Recovery Charge

8.0

16.0

Vdd = 15V, IF = 8A,

di/dt = 300A/

μs

trr

Reverse Recovery Time

(1)

Specified by design

Max RθJA = 84°C/W

Max RθJA = 184°C/W

when mounted on

1 inch2 (6.45 cm2) of 2-

minimum pad area of

oz. (0.071-mm thick)

2-oz. (0.071-mm thick)

Cu.

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