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CSD87381P Datasheet(PDF) 2 Page - Texas Instruments

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Part # CSD87381P
Description  Synchronous Buck NexFET Power Block II
PDF  20 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CSD87381P Datasheet(HTML) 2 Page - Texas Instruments

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CSD87381P
SLPS405B – MARCH 2013 – REVISED MAY 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
TA = 25°C (unless otherwise noted)
(1)
Parameter
Conditions
VALUE
UNIT
MIN
MAX
VIN to PGND
-0.8
30
VSW to PGND
30
Voltage range
VSW to PGND (10 ns)
32
V
TG to VSW
-8
10
BG to PGND
-8
10
Pulsed Current Rating, IDM
(2)
40
A
Power Dissipation, PD
(3)
4
W
Sync FET, ID = 27, L = 0.1mH
36
Avalanche Energy EAS
mJ
Control FET, ID = 20, L = 0.1mH
20
Operating Junction and Storage Temperature Range, TJ, TSTG
-55
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability.
(2)
Pulse Duration
≤50 µS. Duty cycle ≤0.01.
(3)
Device mounted on FR4 material with 1-inch2 (6.45-cm2) Cu.
RECOMMENDED OPERATING CONDITIONS
TA = 25° (unless otherwise noted)
Parameter
Conditions
MIN
MAX
UNIT
Gate Drive Voltage, VGS
4.5
8
V
Input Supply Voltage, VIN
24
V
Switching Frequency, fSW
CBST = 0.1μF (min)
200
1500
kHz
Operating Current
No Airflow
15
A
With Airflow (200 LFM)
20
A
With Airflow + Heat Sink
25
A
Operating Temperature, TJ
125
°C
POWER BLOCK PERFORMANCE
TA = 25° (unless otherwise noted)
Parameter
Conditions
MIN
TYP
MAX
UNIT
VIN = 12V, VGS = 5V,
VOUT = 1.3V, IOUT = 8A,
Power Loss, PLOSS
(1)
1.0
W
fSW = 500kHz,
LOUT = 0.3µH, TJ = 25ºC
TG to TGR = 0V
VIN Quiescent Current, IQVIN
10
µA
BG to PGND = 0V
(1)
Measurement made with six 10µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and
using a high current 5V driver IC.
2
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Copyright © 2013, Texas Instruments Incorporated



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