STF18NM60N datasheet(4/21 Pages) STMICROELECTRONICS

4 / 21 page

Electrical characteristics

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N

4/21

Doc ID 15868 Rev 4

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

600

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 600 V

VDS = 600 V, TJ=125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±25 V

±100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID=6.5 A

0.260 0.285

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f =1 MHz,

VGS = 0

1000

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

Output equivalent

capacitance

VDS = 0, to 480 V, VGS=0

225

Intrinsic resistance

f=1 MHz open drain

3.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 13 A

VGS = 10 V

(see Figure 19)

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 6.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

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