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STW60N65M5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW60N65M5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() May 2011 Doc ID 18222 Rev 2 1/16 16 STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh™ V Power MOSFET in TO-247, TO-3PF Features ■ Worldwide best RDS(on) * area amongst the silicon based devices ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Application Switching applications Description The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Order codes VDSS @ TJmax RDS(on) max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A 1 2 3 TO-247 TO-3PF 1 1 1 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STFW60N65M5 STW60N65M5 60N65M5 TO-3PF TO-247 Tube www.st.com |
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