STW60N65M5 datasheet(5/16 Pages) STMICROELECTRONICS

Part #	STW60N65M5

Description	N-channel 650 V, 0.049 ohm, 46 A MDmesh V Power MOSFET

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 16 page

STFW60N65M5, STW60N65M5

Electrical characteristics

Doc ID 18222 Rev 2

5/16

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 400 V, ID = 30 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

(see Figure 21)

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

184

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 46 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 46 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 21)

448

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 46 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 21)

534

µC

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