STW60N65M5 datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

STFW60N65M5, STW60N65M5

Electrical ratings

Doc ID 18222 Rev 2

3/16

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-247

TO-3PF

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

184

PTOT

Total dissipation at TC = 25 °C

255

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

1400

dv/dt (2)

ISD ≤ 46 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1s; Tc=25°C)

3500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-247

TO-3PF

Rthj-case Thermal resistance junction-case max

0.49

1.58

°C/W

Rthj-amb Thermal resistance junction-ambient max

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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