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GP800NSS33 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # GP800NSS33
Description  Single Switch IGBT Module Preliminary Information
PDF  9 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP800NSS33 Datasheet(HTML) 4 Page - Dynex Semiconductor

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GP800NSS33
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
µs
µs
J
µs
µs
J
µC
A
J
Max.
-
-
-
-
-
-
-
-
-
Typ.
3.2
0.7
1
1.1
0.4
1.2
750
400
0.45
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C = 800A
V
GE = ±15V
V
CE = 1800V
R
G(ON) = = 3.3Ω
R
G(OFF) = 6.8Ω
C
GE = 440nF, L ~ 100nH
I
F = 800A, VR = 1800V,
dI
F/dt = 3600A/µs-1
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case = 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case = 125˚C unless stated otherwise
Units
µs
µs
J
µs
µs
J
µC
A
J
Max.
-
-
-
-
-
-
-
-
-
Typ.
3.4
1.1
1.5
1.1
0.5
1.5
800
650
0.7
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C = 800A
V
GE = ±15V
V
CE = 1800V
R
G(ON) = = 3.3Ω
R
G(OFF) = 6.8Ω
C
GE = 440nF, L ~ 100nH
I
F = 800A, VR = 1800V,
dI
F/dt = 3000A/µs-1
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC



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