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GP800NSS33 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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GP800NSS33 Datasheet(HTML) 6 Page - Dynex Semiconductor |
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6 / 9 page ![]() GP800NSS33 6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig.7 Forward bias safe operating area Fig.8 Transient thermal impedance Fig. 9 DC current rating vs case temperature Fig.10 Typical input capacitance 1 10 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) tp = 50µs tp = 100µs tp = 1ms IC max. (single pulse) Conditions: Tvj = 125˚C, Tcase = 70˚C 0.1 1 10 100 0.001 0.01 1 0.1 10 Pulse width, tp - (ms) Diode Transistor 0 200 400 600 800 1000 1400 1200 0 20 40 60 80 100 120 140 160 Case temperature, Tcase - (˚C) 200 220 240 260 280 300 210 230 250 270 290 010 20 30 40 50 60 Collector-emitter voltage, VCE - (V) Tvj = 25˚C, VCE = 25V VGE = 0V, f = 1MHz |
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