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GP800NSS33 Datasheet(PDF) 5 Page - Dynex Semiconductor

Part # GP800NSS33
Description  Single Switch IGBT Module Preliminary Information
PDF  9 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP800NSS33 Datasheet(HTML) 5 Page - Dynex Semiconductor

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GP800NSS33
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
Fig.5 Diode typical forward characteristics
Fig.6 Reverse bias safe operating area
0
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0
1.0
2.0
3.0
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6.0
Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 25˚C
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0
1.0
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Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 125˚C
1000
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1.0
1.5
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2.5
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3.5
Foward voltage, VF - (V)
Tj = 125˚C
Tj = 25˚C
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Collector-emitter voltage, Vce - (V)
Tcase = 125˚C
Vge = ±15V
Rg(ON) = 3.3Ω
Rg(OFF) = 6.8Ω
CGE = 440nF



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