SI7635DP datasheet(3/9 Pages) VISHAY

3 / 9 page

Document Number: 65021

S11-1141-Rev. B, 13-Jun-11

www.vishay.com

Vishay Siliconix

Si7635DP

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.0020

0.0035

0.0050

0.0065

0.0080

014

VGS =4.5 V

VGS =10 V

ID - Drain Current (A)

020

100

VDS =10 V

VDS =5 V

ID =20A

VDS =16 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

1500

3000

4500

6000

7500

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.7

0.9

1.1

1.3

1.5

- 50

- 25

100

125

150

ID =26A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

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