SI7635DP datasheet(4/9 Pages) VISHAY

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Document Number: 65021

S11-1141-Rev. B, 13-Jun-11

Vishay Siliconix

Si7635DP

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

TJ = 150 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.002

0.004

0.006

0.008

0.010

246

TJ = 25 °C

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

100

150

200

250

00.01

0.1

Time (s)

Safe Operating Area, Junction-to-Ambient

100

0.1

100

0.01

0.1

TA =25 °C

Single Pulse

100 ms

Limited by

RDS(on)*

BVDSS Limited

1ms

10 ms

10 s

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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