STGIPS14K60T datasheet(7/20 Pages) STMICROELECTRONICS

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DocID018534 Rev 4

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STGIPS14K60T

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Note:

tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are

the switching time of IGBT itself under the internally given gate driving condition.

Table 7. Inverter part

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V, VIN

(1)= 0 ÷ 5 V,

IC = 7 A

-2.1

2.5

VCC = Vboot = 15 V, VIN

(1)= 0 ÷ 5 V,

IC = 7 A, TJ = 125 °C

-1.8

ICES

Collector-cut off current

(VIN

(1)= 0 “logic state”)

VCE = 550 V, VCC = VBoot = 15 V

150

µA

Diode forward voltage

VIN

(1) = 0 “logic state”, I

C = 7 A

2.1

Inductive load switching time and energy

ton

Turn-on time

VDD = 300 V,

VCC = Vboot = 15 V,

VIN

(1) = 0 ÷ 5 V,

IC = 7 A

(see Figure 5)

270

tc(on)

Crossover time (on)

130

toff

Turn-off time

520

tc(off)

Crossover time (off)

140

trr

Reverse recovery time

130

Eon

Turn-on switching losses

150

µJ

Eoff

Turn-off switching losses

110

Applied between

HINi, LINi and GND for i = U, V, W (LIN inputs are active-low).

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