STD65N55LF3 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STD65N55LF3

Description	N-channel 55 V, 7.0, 80 A DPAK STripFET III Power MOSFET

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Electrical characteristics

STD65N55LF3

4/13

Doc ID 16371 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min. Typ. Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc = 125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

200

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID= 32 A

7.0

8.5

VGS = 5 V, ID= 32 A

8.5

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 25 V, f=1 MHz,

VGS =0

2200

470

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 27.5 V, ID = 65 A

VGS = 5 V

(see Figure 16)

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