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STD65N55LF3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STD65N55LF3 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STD65N55LF3 Electrical characteristics Doc ID 16371 Rev 2 5/13 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 27 V, ID= 32 A, RG= 4.7 Ω, VGS=10 V (see Figure 15) - 10 25 - ns ns td(off) tf Turn-off delay time Fall time - 50 10 - ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed)(1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% - 80 320 A A VSD Forward on voltage ISD=65 A, VGS=0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=65 A, di/dt =100 A/µs, VDD=30 V, Tj=150 °C (see Figure 17) - 40 60 3 ns nC A |
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