This is information on a product in full production.

January 2013

Doc ID 023011 Rev 4

1/13

13

STGW60H65DF

60 A, 650 V field stop trench gate IGBT with very fast diode

Datasheet

Features

Applications

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT is the result of a compromise

between conduction and switching losses,

maximizing the efficiency of high switching

frequency converters. Furthermore, a slightly

tight parameter distribution result in easier

paralleling operation.

Figure 1.

Internal schematic diagram

TO-247

1

2

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

STGW60H65DF

GW60H65DF

TO-247

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