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STGW60H65DF Datasheet(PDF) 3 Page - STMicroelectronics

Part # STGW60H65DF
Description  60 A, 650 V field stop trench gate IGBT with very fast diode
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW60H65DF Datasheet(HTML) 3 Page - STMicroelectronics

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STGW60H65DF
Electrical characteristics
Doc ID 023011 Rev 4
3/13
2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter
breakdown voltage
(VGE = 0)
IC = 2 mA
650
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 60 A
1.9
V
VGE = 15 V, IC = 60 A
TJ = 150 °C
2.1
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
6.0
V
ICES
Collector cut-off current
(VGE = 0)
VCE = 650 V
25
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
-
7150
345
125
-
pF
pF
pF
Qg
Total gate charge
VCC = 520 V, IC = 60 A,
VGE = 15 V
-206
-
nC
Qge
Gate-emitter charge
-
60
-
nC
Qgc
Gate-collector charge
-
70
-
nC
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
-
67
46
1043
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
TJ = 150 °C
-
64
49
990
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
-
41
165
34
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
TJ = 150 °C
-
49
169
78
-
ns
ns
ns



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