STGW60H65DF datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STGW60H65DF

4/13

Doc ID 023011 Rev 4

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon (1)

Eoff

(2)

Ets

Eon is the turn-on losses when a typical diode is used in the test circuit in

Figure 23. If the IGBT is offered

in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the

same temperature (25 °C and 125 °C).

Turn-off losses include also the tail of the collector current.

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCE = 400 V, IC = 60 A,

RG = 10 Ω, VGE = 15 V

1.5

1.1

2.6

Eon (1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCE = 400 V, IC = 60 A,

RG = 10 Ω, VGE = 15 V

TJ = 150 °C

2.7

1.5

4.2

Table 8.

Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Forward on-voltage

IF = 60 A

IF = 60 A, TJ = 150 °C

1.6

2.6

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 60 A, VR = 400 V,

di/dt = 1700 A/µs

930

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 60 A, VR = 400 V,

di/dt = 1630 A/µs

TJ = 150 °C

100

2800

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