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FDC658AP Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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FDC658AP Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 4 page ![]() SMD Type www.kexin.com.cn 1 MOSFET ■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON) < 50mΩ (VGS =-10V) ● RDS(ON) < 75mΩ (VGS =-4.5V) ● Low Gate Charge 1 2 3 4 5 6 Unit: mm 0.15 +0.02 -0.02 SOT-23-6 ( ) +0.01 -0.01 +0.2 -0.1 0.4-0.1 +0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 25 Continuous Drain Current (Note.1) ID -4 Pulsed Drain Current IDM -20 1.6 0.8 Thermal Resistance.Junction- to-Ambient (Note.1) RthJA 78 Thermal Resistance.Junction- to-Case RthJC 30 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Power Dissipation PD W V ℃ /W A ℃ Note.1: 78℃/W when mounted on a 1 in pad of 2 oz copper Note.2: 156℃/W whe mounted on a minimum pad of 2 oz copper (Note.1) (Note.2) 2 1.Drain 2.Drain 3.Gate 4.Source 5.Drain 6.Drain 5 1 6 2 3 4 P-Channel MOSFET FDC658AP (KDC658AP) |
Similar Part No. - FDC658AP |
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Similar Description - FDC658AP |
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