FDC658AP datasheet(4/4 Pages) KEXIN

4 / 4 page

SMD Type

www.kexin.com.cn

MOSFET

■

Typical Characterisitics

Figure 7.

Qg, GATE CHARGE (nC)

ID = -4A

VDS = -5V

-10V

-15V

Gate Charge Characteristics

Figure 8.

150

300

450

600

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Ciss

Coss

Crss

f = 1 MHz

VGS = 0 V

Capacitance vs Drain to Source Voltage

Figure 9.

0.01

0.1

100

0.1

100

-VDS, DRAIN TO SOURCE VOLTAGE (V)

100ms

100us

rDS(on) LIMIT

VGS = -10V

SINGLE PULSE

RθJA = 156oC/W

TA = 25oC

10ms

1ms

Forward Bias Safe Operating Area

Figure 10.

0.01

0.1

100

t, PULSE WIDTH (s)

SINGLE PULSE

RθJA = 156°C/W

TA = 25°C

Single Pulse Maximum Power

Dissipation

Figure 11.

0.001

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

1000

t, RECTANGULARPULSE DURATION

RθJA(t) = r(t) + RθJA

RθJA = 156oC/W

TJ - TA = P* RθJA(t)

Duty Cycle, D= t1/ t2

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D= 0.5

Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

P-Channel MOSFET

FDC658AP (KDC658AP)

FDC658AP Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

FDC658AP Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Html Pages

1 2 3 4

Datasheet Download

Link URL