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FDC658AP Datasheet(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

Part # FDC658AP
Description  P-Channel MOSFET
PDF  4 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

FDC658AP Datasheet(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

  FDC658AP Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd FDC658AP Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd FDC658AP Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd FDC658AP Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
3
MOSFET
■
Typical Characterisitics
Figure 1.
0
5
10
15
20
0
1
2
3
4
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -10V
-3.5V
-3.0V
-4.5V
-4.0V
-5.0V
-6.0V
On-Region Characteristics
Figure 2.
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
20
-ID, DRAIN CURRENT (A)
VGS = -4.5V
-6.0V
-5.0V
-8.0V
-7.0V
-10V
Normalized On-Resistance vs Drain
Current and Gate Voltage
Figure 3.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
ID = -4.0A
VGS = -10V
Normalized On-Resistance vs Junction
Temperature
Figure 4.
0.02
0.06
0.1
0.14
0.18
0.22
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -2.0A
TJ = 125oC
TJ = 25oC
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
0
3
6
9
12
15
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55oC
25oC
125oC
VDS = -5V
Figure 6.
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS = 0V
TJ = 125oC
25oC
-55oC
Source to Drain Diode Forward Voltage
vs Source Current
P-Channel MOSFET
FDC658AP (KDC658AP)



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