FDC658AP datasheet(2/4 Pages) KEXIN

2 / 4 page

SMD Type

www.kexin.com.cn

MOSFET

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

-1

Gate-Body leakage current

IGSS

VDS=0V, VGS=± 25 V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-1

-3

VGS=-10V, ID=-4A

VGS=-10V, ID=-4A TJ=125℃

VGS=-4.5V, ID=-3.4A

On state drain current

ID(ON)

VGS=-10V, VDS=-5V

(Note.1)

-20

Forward Transconductance

gFS

VDS=-5V, ID=-4A (Note.1)

8.4

Input Capacitance

Ciss

470

Output Capacitance

Coss

126

Reverse Transfer Capacitance

Crss

Total Gate Charge

8.1

Gate Source Charge

Qgs

2.1

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

-1.3

Diode Forward Voltage

VSD

IS=-1.3A,VGS=0V

-1.2

mΩ

(Note.1)

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=-5V, VDS=-15V, ID=-4A (Note.1)

Note.1:Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%

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Marking

.58A

P-Channel MOSFET

FDC658AP (KDC658AP)

VDD = -15V, ID = -1A

VGS = -10V, RGEN = 6Ω

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