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AN2025 Datasheet(PDF) 4 Page - STMicroelectronics

Part # AN2025
Description  Converter Improvement Using
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2025 Datasheet(HTML) 4 Page - STMicroelectronics

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AN2025 - APPLICATION NOTE
4/11
The first phase corresponds to the charging of the junction capacitance of the diode, Cj.
The voltage across the diode VD decreases until it reaches the clamping voltage of the diode -VClamp (see
figure 7). As was explained above, when the total current is equal to IPEAK, VD is equal to -VS.
Once the current has reached IPEAK, it then increases to reach the value I1 corresponding to VD = -VClamp
(see figure 7).
Phase 2: t
∈ [t1, t2]
At t = t1: iT = I1
vD = VClamp
During this phase, the diode works in the ava-
lanche region. Consequently, the voltage across
the diode is equivalent to a voltage generator
equal to VClamp.
The total current increases linearly with a slope
equal to:
(see figure 7)
After t2, the voltage across the diode increases towards -VS (see figure 7).
These considerations show that:
I1 < IPEAK
III.2.3. Estimation of the maximum avalanche peak power: PPEAK_AV
The figure 8 shows in blue color the total current IT (diode + snubber) and in black line the real avalanche
current waveforms during the switching-off of the diode.
Figure 8: Total current and avalanche current waveforms when the diode works in the avalanche area
di
T
dt
--------
VClampVs
L
F
----------------------------
=
IPEAK
I1
IAR
tp < 1µs
t2
iAVALANCHE
iAVALANCHE
VClamp
RS
CS
iT
iT
t1
t
I
Phase2
Phase2
diT
dt
=
V-V
L
Clamp
S
F
RS
VClamp
iAVALANCHE
CS
LF
iT
VS



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