Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

AN2842 Datasheet(PDF) 14 Page - STMicroelectronics

Part # AN2842
Description  Paralleling of power MOSFETs in PFC topology
PDF  22 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2842 Datasheet(HTML) 14 Page - STMicroelectronics

Back Button AN2842 Datasheet HTML 10Page - STMicroelectronics AN2842 Datasheet HTML 11Page - STMicroelectronics AN2842 Datasheet HTML 12Page - STMicroelectronics AN2842 Datasheet HTML 13Page - STMicroelectronics AN2842 Datasheet HTML 14Page - STMicroelectronics AN2842 Datasheet HTML 15Page - STMicroelectronics AN2842 Datasheet HTML 16Page - STMicroelectronics AN2842 Datasheet HTML 17Page - STMicroelectronics AN2842 Datasheet HTML 18Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 14 / 22 page
background image
Approach to the study
AN2842
14/22
Doc ID 15110 Rev 1
the same heat-sink, it is important to know their thermal distribution. In fact, two devices
connected in parallel, but with different working temperatures, have different behaviors. The
different working temperatures could be caused by other factors (another device mounted to
the same heat-sink, different air flow by fan, etc.). Many PFC systems use the same heat-
sink for power device and diode. In this case, the power device close to the diode shows a
working temperature higher than the other. If the circuit does not have a feedback system,
an increase in the temperature could cause failure of the system. In
Figure 16, details of this
phenomenon are shown.
Figure 16. Instant of failure
In the introduction of this document, the study was divided into two areas: the first, which
has been explored in the previous paragraphs, is an analysis of current imbalances due to
the external parameters of a power device. The second is an analysis of the intrinsic
characteristics of a power MOSFET, which are predominant in the mismatching. In this
section, we look at the influence of the voltage threshold VGS(th), RDS(on) and gfs
parameters.
2.6
Differences in the VGS(th)
The following analysis refers to a system with two devices connected in parallel based on
the schematic in
Figure 17.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com