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LT1577CS-3.3/2.8 Datasheet(PDF) 3 Page - Linear Technology |
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LT1577CS-3.3/2.8 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 20 page ![]() 3 LT1575/LT1577 ELECTRICAL CHARACTERISTICS TA = 25°C, VIN = 12V, GATE = 6V, IPOS = INEG = 5V, SHDN = 0.75V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS IQ Supply Current q 512 19 mA VFB LT1575 Reference Voltage – 0.6 1.210 0.6 % q – 1.0 1.210 1.0 % VOUT LT1575-1.5 Output Voltage – 0.6 1.500 0.6 % q – 1.0 1.500 1.0 % LT1575-2.8 Output Voltage – 0.6 2.800 0.6 % q – 1.0 2.800 1.0 % LT1575-3.3 Output Voltage – 0.6 3.300 0.6 % q – 1.0 3.300 1.0 % LT1575-3.5 Output Voltage – 0.6 3.500 0.6 % q – 1.0 3.500 1.0 % LT1575-5 Output Voltage – 0.6 5.000 0.6 % q – 1.0 5.000 1.0 % Line Regulation 10V ≤ VIN ≤ 20V q 0.01 0.03 %/V IFB FB Input Bias Current FB = VFB q – 0.6 – 4.0 µA IOUT OUT Divider Current OUT = VOUT q 0.5 1.0 1.5 mA AVOL LT1575 Large-Signal Voltage Gain VGATE = 3V to 10V q 69 84 dB LT1575-1.5 Large-Signal Voltage Gain VGATE = 3V to 10V q 67 82 dB LT1575-2.8 Large-Signal Voltage Gain VGATE = 3V to 10V q 60 76 dB LT1575-3.3 Large-Signal Voltage Gain VGATE = 3V to 10V q 60 75 dB LT1575-3.5 Large-Signal Voltage Gain VGATE = 3V to 10V q 60 74 dB LT1575-5 Large-Signal Voltage Gain VGATE = 3V to 10V q 56 71 dB VOL GATE Output Swing Low (Note 3) IGATE = 0mA q 2.5 3.0 V VOH GATE Output Swing High IGATE = 0mA q VIN – 1.6 VIN – 1 V IPOS + INEG Supply Current 3V ≤ IPOS ≤ 20V q 0.3 0.625 1.0 mA Current Limit Threshold Voltage 42 50 58 mV q 37 50 63 mV Current Limit Threshold Voltage 3V ≤ IPOS ≤ 20V q – 0.20 – 0.50 %/V Line Regulation SHDN Sink Current Current Flows Into Pin q 2.5 5.0 8.0 µA SHDN Source Current Current Flows Out of Pin q –8 – 15 – 23 µA SHDN Low Clamp Voltage q 0.1 0.25 V SHDN High Clamp Voltage q 1.50 1.85 2.20 V SHDN Threshold Voltage q 1.18 1.21 1.240 V SHDN Threshold Hysteresis q 50 100 150 mV The q denotes specifications which apply over the full operating temperature range. Note 1: Absolute Maximum Ratings are those values beyond which the life of the device may be impaired. Note 2: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formulas: LT1575CN8: TJ = TA + (PD • 100°CW) LT1575CS8: TJ = TA + (PD • 130°CW) LT1577CS: TJ = TA + (PD • 100°CW) Because the LT1577 consists of two regulators in the package, the total LT1577 power dissipation must be used for its junction temperature calculation. The total LT1577 PD = PD (Regulator 1) + PD (Regulator 2). Note 3: The VGS(th) of the external MOSFET must be greater than 3V – VOUT. |
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