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LTC1645CS Datasheet(PDF) 9 Page - Linear Technology |
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LTC1645CS Datasheet(HTML) 9 Page - Linear Technology |
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9 / 24 page ![]() 9 LTC1645 APPLICATIO S I FOR ATIO (a) Undamped VCC Waveform (48" Leads) (b) Undamped VCC Waveform (8" Leads) Figure 5. Ring Experiment No bulk capacitance is present to slow the rate of rise and heavily damp the parasitic resonance. Instead, the fast edge shock excites a resonant circuit formed by a combi- nation of wiring harness, backplane and circuit board parasitic inductances and FET capacitance. In theory, the peak voltage should rise to 2X the input supply, but in practice the peak can reach 2.5X, owing to the effects of voltage dependent FET capacitance. The absolute maximum VCCn potential for the LTC1645 is 13.2V; any circuit with an input of 5V or greater should be scrutinized for ringing. A well-bypassed backplane should not escape suspicion: circuit board trace inductances of as little as 10nH can produce sufficient ringing to overvoltage VCC. Check ringing with a fast storage oscilloscope (such as a LECROY 9314AL DSO) by attaching coax or a probe to VCC and GND, then repeatedly inserting the circuit board into the backplane. Figures 5a and 5b show typical results in a 12V application with different VCC lead lengths. The peak amplitude reaches 22V, breaking down the ESD protection diode in the process. There are two methods for eliminating ringing: clipping and snubbing. A transient voltage suppressor is an effec- tive means of limiting peak voltage to a safe level. Figure 6 shows the effect of adding an ON Semiconductor, 1SMA12CAT3, on the waveform of Figure 5. Figures 7a and 7b show the effects of snubbing with different RC networks. The capacitor value is chosen as 10X to 100X the FET COSS under bias and R is selected for best damping—1 Ω to 50Ω depending on the value of parasitic inductance. VOUT 0.1 µF 1645 F05 10 Ω R1 0.01 Ω 12V IRF7413 CLOAD + + – LTC1645 POWER LEADS SCOPE PROBE 8' 1 µs/DIV 1645 F05a 0V 24V 1 µs/DIV 1645 F05b 0V 24V |
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