The RF MOSFET Line

RF Power

Field-Effect Transistors

N-Channel Enhancement-Mode MOSFET

Designed for wideband large–signal amplifier and oscillator applications up to

400 MHz range, in single ended configuration.

• Guaranteed 28 Volt, 150 MHz Performance

Output Power = 15 Watts

Narrowband Gain = 16 dB (Typ)

Efficiency = 60% (Typical)

• Small–Signal and Large–Signal

Characterization

• 100% Tested For Load

Mismatch At All Phase

Angles With 30:1 VSWR

• Excellent Thermal Stability,

Ideally Suited For Class A

Operation

• Facilitates Manual Gain

Control, ALC and

Modulation Techniques

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

65

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

65

Vdc

Gate–Source Voltage

VGS

±40

Vdc

Drain Current — Continuous

ID

2.5

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

55

0.314

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

3.2

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF136

15 W, to 400 MHz

N–CHANNEL

MOS BROADBAND

RF POWER FET

CASE 211–07, STYLE 2

D

G

S

Order this document

by MRF136/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 7