The RF MOSFET Line

RF Power

Field Effect Transistors

N–Channel Enhancement Mode MOSFETs

Designed primarily for wideband large–signal output and driver from 30 – 500

MHz.

• MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc

Output Power = 20 W

Gain = 13.5 dB

Efficiency = 50%

• Replacement for Industry Standards such as MRF136, DV2820, BLF244,

SD1902, and ST1001

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• Excellent Thermal Stability, Ideally Suited for Class A Operation

• Low Crss — 4.0 pF @ VDS = 28 V

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Gate Voltage

VDSS

65

Vdc

Drain–Gate Voltage

(RGS = 1.0 MΩ)

VDGR

65

Vdc

Gate–Source Voltage

VGS

±20

Adc

Drain Current — Continuous

ID

4.0

Adc

Total Device Dissipation @ TC = 25°C

Derate Above 25

°C

PD

70

0.4

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to 150

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.5

°C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF166C

20 W, 500 MHz

MOSFET

BROADBAND

RF POWER FETs

CASE 319–07, STYLE 3

D

G

S

Order this document

by MRF166C/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 10