Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 5.0 mA)

V(BR)DSS

65

—

—

V

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)

IDSS

—

—

0.5

mA

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0 V)

IGSS

—

—

1.0

µA

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

VGS(th)

1.5

3.0

4.5

V

Forward Transconductance

(VDS = 10 V, ID = 1.5 A)

gfs

0.8

1.1

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Ciss

—

28

—

pF

Output Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Coss

—

30

—

pF

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Crss

—

4.0

—

pF

FUNCTIONAL CHARACTERISTICS

Common Source Power Gain

(VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA)

Gps

13.5

16

—

dB

Drain Efficiency

(VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA)

η

50

55

—

%

Electrical Ruggedness

(VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA,

Load VSWR 30:1 at All Phase Angles)

ψ

No Degradation in Output Power

2

REV 10