PIC16C641-04ESLASHTQ datasheet(92/136 Pages) MICROCHIP

92 / 136 page

PIC16C64X & PIC16C66X

DS30559A-page 92

Preliminary

12.1

DC Characteristics:

PIC16C641/642/661/662-04 (Commercial, Industrial, Automotive)

PIC16C641/642/661/662-10 (Commercial, Industrial, Automotive)

PIC16C641/642/661/662-20 (Commercial, Industrial, Automotive)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

–40

°C ≤ TA ≤ +85°C

for industrial,

°C

≤ TA ≤ +70°C

commercial, and

–40

°C ≤ TA ≤ +125°C automotive

Param

No.

Sym

Characteristic

Min

Typ† Max Units

Conditions

D001

D001A

VDD

Supply Voltage

4.0

4.5

–

6.0

5.5

XT, RC and LP osc conﬁguration

HS osc conﬁguration

D002*

VDR

RAM Data Retention Voltage(1)

1.5

–

Device in SLEEP mode

D003

VPOR

VDD start voltage to

ensure internal Power-on

Reset signal

–VSS

–

See section on Power-on Reset for

details

D004*

SVDD

VDD rise rate to ensure internal

Power-on Reset signal

0.05

–

V/ms See section on Power-on Reset for

details

D005

VBOR

Brown-out Reset Voltage

3.7

4.0

4.3

4.4

BODEN conﬁguration bit is clear

Automotive

D010

IDD

Supply Current(2)

–

2.7

XT and RC osc conﬁguration

FOSC = 4 MHz, VDD = 5.5V,

WDT disabled (4)

D010A

–

µA

LP osc conﬁguration,

PIC16C64X & PIC16C66X-04 only

FOSC = 32 kHz, VDD = 4.0V,

WDT disabled

D013

–

13.5

HS osc conﬁguration

FOSC = 20 MHz, VDD = 5.5V,

WDT disabled

Module Differential Current (5)

D015

∆IBOR

Brown-out Reset Current

–

350

425

µA

BODEN bit is clear, VDD = 5.0V

D016

∆ICOMP

Comparator Current for

each Comparator

–

100

µAVDD = 4.0V

D017

∆IVREF

VREF Current

–

300

µAVDD = 4.0V

D021

∆IWDT

WDT Current

–

6.0

–

µA

VDD = 4.0V

Automotive

D021

IPD

Power-down Current (3)

–

1.5

2.5

µA

VDD = 4.0V, WDT disabled

Automotive

* These parameters are characterized but not tested.

† Data in “Typ” column is at 5.0V, 25

°C, unless otherwise stated. These parameters are for design guidance only

and are not tested.

Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin

loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an

impact on the current consumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tri-stated

™, pulled to VDD,

MCLR = VDD; WDT enabled/disabled as speciﬁed.

3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is

measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.

4: For RC osc conﬁguration, current through Rext is not included. The current through the resistor can be

estimated by the formula Ir = VDD/2Rext (mA) with Rext in k

Ω.

5: The

∆ current is the additional current consumed when this peripheral is enabled. This current should be

added to the base IDD or IPD measurement.

PIC16C641-04E/TQ Datasheet(PDF) 92 Page - Microchip Technology

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