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STGIPS40W60L1 Datasheet(PDF) 14 Page - STMicroelectronics |
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STGIPS40W60L1 Datasheet(HTML) 14 Page - STMicroelectronics |
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14 / 21 page ![]() Electrical characteristics STGIPS40W60L1 14/21 Doc ID 018866 Rev 3 3.2 Recommendations ● Input signal HIN is active high logic. A 85 k Ω (typ.) pull down resistor is built-in for each high side input. If an external RC filter is used, for noise immunity, pay attention to the variation of the input signal level. ● Input signal LIN is active low logic. A 720 k Ω (typ.) pull-up resistor, connected to an internal 5 V regulator through a diode, is built-in for each low side input. ● To prevent the input signals oscillation, the wiring of each input should be as short as possible. ● By integrating an application specific type HVIC inside the module, direct coupling to MCU terminals without any opto-coupler is possible. ● Each capacitor should be located as nearby the pins of IPM as possible. ● Low inductance shunt resistors should be used for phase leg current sensing. ● Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. ● The SD/OD signal should be pulled up to 5 V / 3.3 V with an external resistor (see Section 4: Smart shutdown function for detailed info). ● When setting the maximum voltage to be applied between P-N, the internal stray inductance and the maximum di/dt should be considered. Due to both internal and layout stray inductances, the di/dt results in a voltage surges between the DC-link capacitor and the switches during commutations. ● Suggested control supply voltage (VCC): from 13.5 V to 18 V ● Suggested high side bias voltage (VBS between VBOOT and PHASE): from 13 V to 18 V For further details refer to AN3338. Table 15. Recommended operating conditions Symbol Parameter Conditions Value Unit Min. Typ. Max. VPN Supply voltage Applied between P-Nu, Nv, Nw 300 400 V VCC Control supply voltage Applied between VCC-GND 13.5 15 18 V VBS High side bias voltage Applied between VBOOTi-OUTi for i = U, V, W 13 18 V tdead Blanking time to prevent Arm-short For each input signal 1 µs fPWM PWM input signal -40°C < Tc < 100°C -40°C < Tj < 125°C 20 kHz TC Case operation temperature 100 °C |
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