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STL38N65M5 Datasheet(PDF) 8 Page - STMicroelectronics |
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STL38N65M5 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 17 page ![]() Electrical characteristics STL38N65M5 8/17 Doc ID 023239 Rev 1 Figure 14. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode. E 300 200 100 0 0 20 RG( Ω) ( μJ) 10 30 400 500 600 40 ID=20A VDD=400V L=50µH Eon Eoff AM12643v1 |
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