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STL38N65M5 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STL38N65M5
Description  Low input capacitance and gate charge
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL38N65M5 Datasheet(HTML) 1 Page - STMicroelectronics

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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
January 2013
Doc ID 023239 Rev 1
1/17
17
STL38N65M5
N-channel 650 V, 0.090
Ω typ., 22.5 A MDmesh™ V
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet — preliminary data
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which
is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1.
Internal schematic diagram
Order code
VDS @
TJmax
RDS(on)
max
ID
STL38N65M5
710 V
0.105
Ω
22.5 A
(1)
1.
The value is rated according to R
thj-case
and limited by
package.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STL38N65M5
38N65M5
PowerFLAT™ 8x8 HV
Tape and reel
www.st.com


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