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STL38N65M5 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL38N65M5
Description  Low input capacitance and gate charge
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL38N65M5 Datasheet(HTML) 5 Page - STMicroelectronics

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STL38N65M5
Electrical characteristics
Doc ID 023239 Rev 1
5/17
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
t
d(V)
t
r(V)
t
f(i)
t
c(off)
Voltage delay time
Voltage rise time
Crossing fall time
Crossing time
V
DD
= 400 V, I
D
= 20 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see
Figure 20)
-
66
9
9
13
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
I
SD
(1)
I
SDM
(1)(2)
1.
The value is rated according to R
thj-case.
and limited by package
2.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
22.5
90
A
A
V
SD
(3)
3.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 22.5 A, V
GS
= 0
-
1.5
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 22.5 A, di/dt = 100 A/μs
V
DD
= 100 V (see
Figure 17)
-
354
6
34
ns
μC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 22.5 A, di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 150 °C
(see
Figure 17)
-
428
8
38
ns
μC
A



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