STW22N95K5 datasheet(3/14 Pages) STMICROELECTRONICS

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DocID025115 Rev 3

3/14

STW22N95K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate- source voltage

± 30

Drain current (continuous) at T

= 25 °C

17.5

Drain current (continuous) at T

= 100 °C

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

TOT

Total dissipation at T

= 25 °C

250

Max current during repetitive or single pulse avalanche

(pulse width limited by T

jmax

)

Single pulse avalanche energy

(starting T

= 25 °C, I

, V

= 50 V)

182

ESD

Gate-source human body model

(R= 1,5 k

Ω, C = 100 pF)

2kV

dv/dt

(2)

≤ 17.5 A, di/dt ≤ 100 A/μs, V

DS(peak) ≤

(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(3)

SD ≤

760 V

MOSFET dv/dt ruggedness

V/ns

Operating junction temperature

-55 to 150

°C

stg

Storage temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

thj-case

Thermal resistance junction-case max

0.5

°C/W

thj-amb

Thermal resistance junction-amb max

°C/W

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