DocID025115 Rev 3

5/14

STW22N95K5

Electrical characteristics

14

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 475 V, I

D

= 9 A,

R

G

=4.7

Ω, V

GS

=10 V

(see Figure 18)

-18

-

ns

t

r

Rise time

-

9

-

ns

t

d(off)

Turn-off delay time

-

65

-

ns

t

f

Fall time

-

18

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

-

17.5

A

I

SDM

Source-drain current (pulsed)

-

70

A

V

SD

(1)

1.

Pulsed: pulse duration = 300μs, duty cycle 1.5%

Forward on voltage

I

SD

= 17.5 A, V

GS

=0

-

1.5

V

t

rr

Reverse recovery time

I

SD

= 17.5 A, V

DD

= 60 V

di/dt = 100 A/μs,

(see Figure 17)

-

513

ns

Q

rr

Reverse recovery charge

-

12

μC

I

RRM

Reverse recovery current

-

46

A

t

rr

Reverse recovery time

I

SD

= 17.5 A,V

DD

= 60 V

di/dt=100 A/μs,

Tj=150 °C

(see

Figure 17)

-

670

ns

Q

rr

Reverse recovery charge

-

15

μC

I

RRM

Reverse recovery current

-

44

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)GSO

Gate-source breakdown voltage

I

GS

= ± 1 mA, I

D

= 0

30

-

-

V