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STL8DN6LF6AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STL8DN6LF6AG Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page  January 2016 DocID028014 Rev 3 1/16 This is information on a product in full production. www.st.com STL8DN6LF6AG Automotive-grade dual N- channel 60 V, 21 mΩ typ., 32 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DI package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL8DN6LF6AG 60 V 27 mΩ 32 A 55 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Wettable flank package Applications Switching applications Description This device is a dual N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STL8DN6LF6AG 8DN6LF6 PowerFLAT™ 5x6 double island Tape and reel |
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