STL8DN6LF6AG datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STL8DN6LF6AG

Description	Automotive-grade dual N-channel 60 V, 21 mΩ typ., 32 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DI package

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

STL8DN6LF6AG

4/16

DocID028014 Rev 3

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 250 µA

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 60 V

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 9.6 A

mΩ

VGS = 4.5 V, ID = 9.6 A

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

1340

Coss

Output

capacitance

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 30 V, ID = 9.6 A, VGS = 10 V (see

Figure 14: "Test circuit for gate charge

behavior")

Qgs

Gate-source

charge

4.6

Qgd

Gate-drain charge

4.3

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD = 30 V, ID = 12.5 A RG = 4.7 Ω,

VGS = 10 V (see Figure 13: "Test circuit for

resistive load switching times" and Figure 18:

"Switching time waveform")

9.6

Rise time

td(off)

Turn-off

delay time

Fall time

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