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STL8DN6LF6AG Datasheet(PDF) 5 Page - STMicroelectronics |
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STL8DN6LF6AG Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STL8DN6LF6AG Electrical characteristics DocID028014 Rev 3 5/16 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 9.6 A ISDM (1) Source-drain current (pulsed) - 38 A VSD (2) Forward on voltage VGS = 0 V, ISD = 9.6 A - 1.3 V trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, VDD = 48 V, Tj = 25 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 22.5 ns Qrr Reverse recovery charge - 22.2 nC IRRM Reverse recovery current - 2.0 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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