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STL8DN6LF6AG Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL8DN6LF6AG
Description  Automotive-grade dual N-channel 60 V, 21 mΩ typ., 32 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DI package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL8DN6LF6AG Datasheet(HTML) 3 Page - STMicroelectronics

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STL8DN6LF6AG
Electrical ratings
DocID028014 Rev 3
3/16
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
±20
V
ID
Drain current (continuous) at Tcase = 25 °C
32
A
Drain current (continuous) at Tcase = 100 °C
23
ID
(1)
Drain current (continuous) at Tpcb = 25 °C
9.6
A
Drain current (continuous) at Tpcb = 100 °C
6.8
IDM
(1)(2)
Drain current (pulsed)
38
A
IDM
(2)
Drain current (pulsed)
128
A
PTOT
Total dissipation at Tcase = 25 °C (one channel active)
55
W
PTOT
Total dissipation at Tpcb = 25 °C (one channel active)
4.8
Tstg
Storage temperature
-55 to 175
°C
Tj
Operating junction temperature
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s.
(2)
Pulse width is limited by safe operating area
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
2.7
°C/W
Rthj-pcb
(1)
Thermal resistance junction-pcb
31.3
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAV
Avalanche current, not repetitive
32
A
EAS
(1)
Single pulse avalanche energy
120
mJ
Notes:
(1)
starting Tj = 25 °C, ID = 38 A, VDD = 43.5 V.



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