STL86N3LLH6AG datasheet(1/16 Pages) STMICROELECTRONICS

Part #	STL86N3LLH6AG

Description	High avalanche ruggedness

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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This is information on a product in full production.

February 2015

DocID026950 Rev 3

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STL86N3LLH6AG

Automotive-grade N-channel 30 V, 0.004

Ω typ., 80 A

STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Designed for automotive application and

AEC-Q101 qualified

• Very low on-resistance

• Very low gate charge

• High avalanche ruggedness

• Low gate drive power loss

• Wettable flank package

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ H6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

PowerFLAT™ 5x6

1

2

3

4

AM15540v2

5

6

7

8

12

3

4

Top View

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

Order code

VDS

RDS(on)

max

ID

STL86N3LLH6AG

30 V

0.0052

Ω

80 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STL86N3LLH6AG

86N3LLH6

PowerFLAT™ 5x6

Tape and reel

www.st.com

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