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STL86N3LLH6AG Datasheet(PDF) 5 Page - STMicroelectronics |
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STL86N3LLH6AG Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() DocID026950 Rev 3 5/16 STL86N3LLH6AG Electrical characteristics 16 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 21 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 84 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 21 A, VGS=0 - 1.1 V trr Reverse recovery time ISD = 10.5 A, di/dt = 100 A/µs, VDD=25 V -24 ns Qrr Reverse recovery charge - 16.8 - nC IRRM Reverse recovery current - 1.4 - A |
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