STL86N3LLH6AG datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STL86N3LLH6AG

4/16

DocID026950 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V,

VDS = 30 V at TC =125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

1.7

2.5

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 10.5 A

0.004

0.0052

VGS= 4.5 V, ID= 10.5 A

0.0067

0.0076

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f=1 MHz,

VGS=0

1350

1690

2030

Coss

Output capacitance

230

290

350

Crss

Reverse transfer

capacitance

140

176

210

Total gate charge

VDD=15 V, ID = 21 A

VGS =4.5 V

(see Figure 14)

Qgs

Gate-source charge

Qgd

Gate-drain charge

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

1.25

1.7

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD=15 V, ID= 10.5 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

-9.5

Rise time

td(off)

Turn-off delay time

Fall time

STL86N3LLH6AG Datasheet(PDF) 4 Page - STMicroelectronics

STL86N3LLH6AG Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL