LM5100A, LM5100B, LM5100C

LM5101A, LM5101B, LM5101C

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SNOSAW2Q – SEPTEMBER 2006 – REVISED NOVEMBER 2015

7 Specifications

7.1 Absolute Maximum Ratings

See

(1) (2)

MIN

MAX

UNIT

VDD to VSS

−0.3

18

V

HB to HS

−0.3

18

V

LI or HI input

−0.3

V

LO output

−0.3

V

HO output

V

−5

100

V

HB to VSS

118

V

Junction temperature

150

°C

Storage temperature

−55

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military or Aerospace specified devices are required, contact the Texas Instruments Sales Office or Distributors for availability and

specifications.

(3)

In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally not

exceed –1 V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage

transiently. If negative transients occur, the HS voltage must never be more negative than VDD – 15 V. For example if VDD = 10 V, the

negative transients at HS must not exceed –5 V.

7.2 ESD Ratings

VALUE

UNIT

±2000

Electrostatic

Option A

50

V

discharge

Option B and C

100

(1)

The Human Body Model (HBM) is a 100-pF capacitor discharged through a 1.5-k

Ω resistor into each pin. 2 kV for all pins except Pin 2,

Pin 3 and Pin 4 which are rated at 1000 V for HBM.

(2)

Machine Model (MM) ratings are: 100 V(MM) for Options B and C; 50 V(MM) for Option A.

7.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

VDD

9

14

V

HS

–1

100

V

HB

V

HS slew rate

< 50

V/ns

Junction temperature

−40

125

°C

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