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IS25LP032 Datasheet(PDF) 38 Page - Integrated Silicon Solution, Inc

Part # IS25LP032
Description  3V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI
PDF  90 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LP032 Datasheet(HTML) 38 Page - Integrated Silicon Solution, Inc

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IS25LP032/064/128
Integrated Silicon Solution, Inc.- www.issi.com
38
Rev. D
10/03/2014
8.11 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h)
A Block Erase (BER) instruction erases a 32/64 Kbyte block of the IS25LP032/064/128. Before the execution of
a BER instruction, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL
is reset automatically after the completion of a block erase operation.
The BER instruction code and three address bytes are input via SI. Erase operation will start immediately after
the CE# is pulled high, otherwise the BER instruction will not be executed. The internal control logic
automatically handles the erase voltage and timing. Refer to Figure 8.14-8.17 for the Block Erase Sequence.
Figure 8.14 Block Erase (64k) Sequence
Instruction = D8h
23
CE #
SCK
SI
3
2
SO
1
0
3-byte Address
High Impedance
22
21
...
0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
Mode 3
Mode 0
Figure 8.15 Block Erase (64k) Sequence (QPI)
D8h
CE#
SCK
IO[3:0]
Address
0
1
2
3
4
5
6
7
Mode 3
Mode 0
23:20 19:16 15:12 11:8
7:4
3:0



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