CC2564MODACMOG datasheet(7/62 Pages) TI1

7 / 62 page

CC2564MODN, CC2564MODA

www.ti.com

SWRS160D – FEBRUARY 2014 – REVISED DECEMBER 2015

Specifications

Unless otherwise indicated, all measurements are taken at the device pins of the TI test evaluation board

(EVB). All specifications are over process, voltage, and temperature, unless otherwise indicated.

All values apply to the CC2564MODA and CC2564MODN devices, unless otherwise indicated.

4.1

Absolute Maximum Ratings

(1)

Over operating free-air temperature range (unless otherwise indicated). All parameters are measured as follows: VDD_IN =

3.6 V and VDD_IO = 1.8 V (unless otherwise indicated).

PARAMETERS

MIN

MAX

UNIT

VDD_IN

Supply voltage range

–0.5

4.8

VDD_IO

–0.5

2.145

Input voltage to analog pins(1)

–0.5

2.1

Input voltage to all other pins

–0.5

VDD_IO + 0.5

Operating ambient temperature range(2)

–30

°C

Bluetooth RF inputs

dBm

Storage temperature range, Tstg

–40

100

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(1)

Analog pin: BT_ANT

(2)

The module supports a temperature range of –30°C to 85°C because of the operating conditions of the crystal.

4.2

ESD Ratings

VALUE

UNIT

V(ESD) electrostatic

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±500

discharge

Charged device model (CDM), per JEDEC specification JESD22- ±YYY V

±500

C101(2)

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

4.3

Power-On Hours

(1)

DEVICE

CONDITIONS

POWER-ON HOURS

Duty Cycle = 25% active and 75% sleep

CC2564MODx

15,400 (7 Years)

Tambient = 70ºC

(1)

This information is provided solely to give the customer an estimation of the POH under certain specified conditions, and is not intended

to – and does not – extend the warranty for the device under TI’s Standard Terms and Conditions.

4.4

Recommended Operating Conditions

RATING

CONDITION

SYM

MIN

MAX

UNIT

Power supply voltage

VDD_IN

2.2

4.8

I/O power supply voltage

VDD_IO

1.62

1.92

High-level input voltage

Default

VIH

0.65 x VDD_IO

VDD_IO

Low-level input voltage

Default

VIL

0.35 x VDD_IO

I/O input rise and fall times,10% to 90% — asynchronous mode

tr and tf

I/O input rise and fall times, 10% to 90% — synchronous mode (PCM)

2.5

Voltage dips on VDD_IN (VBAT)

400

duration = 577

μs to 2.31 ms, period = 4.6 ms

Maximum ambient operating temperature (1)

–30

°C

(1)

A crystal-based solution is limited by the temperature range required for the crystal to meet 20 ppm.

Specifications

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