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Document ID

Issued Date

Revised Date

Revision

Page.

FMBT2907AW

DS-231134

2009/08/10

2010/03/10

B

9

Package outline

600mA General Purpose

PNP Silicon

Transistor

(BV

= -60V@I =-10mA)

Lead-free parts for green partner, exceeds environmental

standards of MIL-STD-19500 /228

Features

collector-emitter breakdown voltage

PNP silicon epitaxial planar transistor, is designed for general

purpose and amplifier applications.

Capable of 150mW power dissipation.

Suffix "-H" indicates Halogen-free part, ex.FMBT2907AW-H.

CEO

C

•

•

•

•

•

High

Mechanical data

Epoxy:UL94-V0 rated flame retardant

Case :

Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

Mounting Position : Any

•

•

•

•

•

Molded plastic, SOT-323

Weight : Approximated 0.006 gram

Dimensions in inches and (millimeters)

0.032 (0.80)

0.040 (1.00)

0.054 (1.35)

0.046 (1.15)

SOT-323

(A)

(B)

0.096 (2.40)

0.080 (2.00)

(C)

0.021 (0.53)

0.017 (0.42)

PNP SMD Transistor

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current continuous

-

Total device dissipation FR-5 board, (1) T = 25°C

A

Storage temperature range

Operating junction temperature range

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

D

T

J

T

STG

-55 to +150

-55 to +150

-60

UNIT

V

V

V

mA

mW

A

o

R

θJA

Thermal resistance junction to ambient

1.FR-5 = 1.0 X 0.75 X0.062 in.

FMBT2907AW

-60

-5.0

-600

833

150